| PART |
Description |
Maker |
| 1416GN-120E 1416GN-120EL 1416GN-120EP |
GaN Transistors
|
Microsemi
|
| 1012GN-800V 3135GN-280LV |
GaN Transistors
|
Microsemi
|
| 1214GN-120EP 1214GN-120EL |
GaN Transistors
|
Microsemi
|
| 2731GN-110M |
GaN Transistors
|
Microsemi
|
| 2731GN-200M |
GaN Transistors
|
Microsemi
|
| 1214GN-280LV |
GaN Transistors
|
Microsemi
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| DDB-KJS-M2 DDB-KJS DDB-KJS-L1 DDB-KJS-L2 DDB-KJS-L |
LED GaN
|
DOMINANT[DOMINANT Semiconductors]
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
|
